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HSE11
GaAs Schottky Barrier Diode for SHF Mixer
ADE-208-162A (Z) Rev. 1 Sep. 1994 Features
* Low noise GaAs schottky. * Low capacitance. (C = 0.4pF max)
Ordering Information
Type No. HSE11 Mark Cathode mark Package Code ERP
Outline
Cathode mark 1 2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25C)
Item Reverse voltage Forward current Peak forward current Junction temperature Lead temperature Storage temperature Symbol VR IF IFM Tj Tl* Tstg Value 4.0 50 150 125 230 -55 to +125 Unit V mA mA C C C
Note: Value at the nearest point from body for 10sec max. (one time)
HSE11
Electrical Characteristics (Ta = 25C)
Item Forward voltage Reverse voltage Capacitance Series resistance Symbol VF VR C rs Min -- 4.0 -- -- Typ -- -- -- -- Max 1.0 -- 0.4 1.3 Unit V V pF 1/2 Test Condition IF = 50mA IR = 10A VR = 0V, f = 1MHz rs = 50VF3 - 150.75VF2 + 100.75VF1 VF1: IF = 1.0mA, VF2: IF = 2.7mA, VF3: IF = 20mA *C = 25pF
ESD capability
--
25
--
--
V
Note: Failure criterion; IR 1A at VR = 2V
10
-1
Forward current I F (A)
10
-2
10
-3
10
-4
10
-5
10-6 0 0.6 0.2 0.4 0.8 Forward voltage VF (V) 1.0
Fig.1 Forward current Vs. Forward voltage
2
HSE11
10
-8
10 Reverse current I R (A)
-9
10-10
10-11
10
-12
10
-13
0
2
8 6 4 Reverse voltage VR (V)
10
Fig.2 Reverse current Vs. Reverse voltage
f = 1MHz
1.0 Capacitance C (pF)
10
-1
10
-2
10-1
1.0 Reverse voltage VR (V)
10
Fig.3 Capacitance Vs. Reverse voltage
3
HSE11
.8 .6 .4 1 1.5 2 3 4 5 10 1.5 2 3 45 10
16GHz
.2
12GHz 8GHz 4GHz
.2 .4 .6 .8 1
0
1GHz
-10 -.2 -3 -.4 -2 -.6 -.8 -1 -1.5 -5 -4
1 2 3 4 6 8
(mA) (mA) (mA) (mA) (mA) (mA)
Fig.4 S Parameter
Package Dimensions
Unit: mm
1
2 1.0 1.0 3.5 0.15 0.6 1 Cathode 2 Anode 0 0.1 HITACHI Code JEDEC Code EIAJ Code Weight (g)
0.3
Cathode Mark (Silver)
ERP -- -- 0.002
4

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